Año: 2021
Journal Impact Factor (JIF): 32.0860
| Categoría | Edición | Posición | Cuartil | Tercil | Decil |
|---|---|---|---|---|---|
| CHEMISTRY, MULTIDISCIPLINARY | SCIE | 5/179 | Q1 | T1 | D1 |
| CHEMISTRY, PHYSICAL | SCIE | 4/165 | Q1 | T1 | D1 |
| MATERIALS SCIENCE, MULTIDISCIPLINARY | SCIE | 8/345 | Q1 | T1 | D1 |
| NANOSCIENCE & NANOTECHNOLOGY | SCIE | 3/109 | Q1 | T1 | D1 |
| PHYSICS, APPLIED | SCIE | 5/161 | Q1 | T1 | D1 |
| PHYSICS, CONDENSED MATTER | SCIE | 2/69 | Q1 | T1 | D1 |
Año: 2021
Journal Citation Indicator (JCI): 4,180
| Categoría | Posición | Cuartil | Tercil | Decil | Percentil |
|---|---|---|---|---|---|
| CHEMISTRY, MULTIDISCIPLINARY | 2/224 | Q1 | T1 | D1 | 99,33 |
| CHEMISTRY, PHYSICAL | 4/174 | Q1 | T1 | D1 | 97,99 |
| MATERIALS SCIENCE, MULTIDISCIPLINARY | 5/414 | Q1 | T1 | D1 | 98,91 |
| NANOSCIENCE & NANOTECHNOLOGY | 2/138 | Q1 | T1 | D1 | 98,91 |
| PHYSICS, APPLIED | 3/178 | Q1 | T1 | D1 | 98,60 |
| PHYSICS, CONDENSED MATTER | 2/79 | Q1 | T1 | D1 | 98,10 |
Año:
2021
CiteScore:
47,700
| Categoría | Posición | Cuartil | Tercil | Decil |
|---|---|---|---|---|
| Materials Science (all) | 4/455 | Q1 | T1 | D1 |
| Mechanical Engineering | 2/601 | Q1 | T1 | D1 |
| Mechanics of Materials | 2/384 | Q1 | T1 | D1 |
SJR año:
2021
Factor de Impacto:
8,663
| Categoría | Posición | Cuartil | Tercil | Decil |
|---|---|---|---|---|
| Materials Science (miscellaneous) | 5/641 | Q1 | T1 | D1 |
| Mechanical Engineering | 2/644 | Q1 | T1 | D1 |
| Mechanics of Materials | 2/400 | Q1 | T1 | D1 |
| Nanoscience and Nanotechnology | 2/79 | Q1 | T1 | D1 |
| Agencia | Código de Proyecto |
|---|---|
| China Postdoctoral Science Foundation | BX20190018; 2018M633128 |
| DOE, Office of Science and Office of Basic Energy Sciences | - |
| EPSRC | EP/R023980/1; EP/R043272/1 |
| EPSRC New Investigator Award | EP/R043272/1 |
| European Union | 841386 |
| Marie Skodowska-Curie Individual Fellowships | 839136 |
| National Basic Research Program of China (973Program) | 2015CB932203 |
| National Natural Science Foundation of China | 61722501; 91733301; 62004165; 11527901; 51602290 |
| Office of Science, Office of Basic Energy Sciences, the U.S. Department of Energy | DE-AC02-05CH11231 |
| Research and Application of Key Technologies of GaN-based Power Devices on Si Substrate | 2019B010128001 |
| research of AlGaN HEMT MEMS sensor for work in extreme environment | JCYJ20170412153356899 |
| Royal Society | - |
| Shenzhen Basic Research Project | JCYJ20170818142926085 |
| Shenzhen Institute of the Third Generation Semiconductors, Basic Research Institution of City of Shenzhen | - |
| study and optimization of electrostatic discharge mechanism for GaN HEMT devices | JCYJ20180305180619573 |
| SUSTech Presidential Postdoctoral Fellowship | - |
| Tata Group | UF150033 |
| US Office of Naval Research | N00014-15-1-2244 |
| Zhengzhou University 2019 key program for discipline construction | XKZDJC201903 |
| # | Autor |
|---|---|
| 1 | Yang, XY |
| 2 | Luo, DY |
| 3 | Xiang, YR |
| 4 | Zhao, LC |
| 5 | Anaya, M |
| 6 | Shen, YL |
| 7 | Wu, J |
| 8 | Yang, WQ |
| 9 | Chiang, YH |
| 10 | Tu, YG |
| 11 | Su, R |
| 12 | Hu, Q |
| 13 | Yu, HY |
| 14 | Shao, GS |
| 15 | Huang, W |
| 16 | Russell, TP |
| 17 | |
| 18 | Stranks, SD |
| 19 | |
| 20 |
